| PART |
Description |
Maker |
| 2SK1657 |
Directly driven by Ics having a 3V power supply Has low gate leakage current IGSS= 5nA MAX
|
TY Semiconductor Co., L...
|
| EKMB1100110 |
Low current consumption for battery-driven applications
|
Panasonic Semiconductor
|
| AND8139D NL17SV16XV5T2 AND8139 NL17SV00XV5T2 NL17S |
2-Input OR Gate, Ultra-Low Voltage
Non Inverting Buffer, Ultra Low Voltage
Single 2-Input NOR Gate, Ultra-Low Voltage
Single 2-Input NAND Gate, Ultra-Low Voltage
ULTRA-LOW VOLTAGE MINIGATE DEVICES SOLVE 1.2 V INTERFACE PROBLEMS
|
ONSEMI[ON Semiconductor]
|
| 74AUP1G86GS 74AUP1G86GF |
Low-power 2-input EXCLUSIVE-OR gate AUP/ULP/V SERIES, 2-INPUT XOR GATE, PDSO6
Low-power 2-input EXCLUSIVE-OR gate 低功输入异或
|
NXP Semiconductors N.V.
|
| 100201SC 100201 100201SCX |
From old datasheet system
Low Power 2-Input OR/NOR Gate/Inverter 100K SERIES, 2-INPUT OR/NOR GATE, PDSO8
Low Power 2-Input OR/NOR Gate/Inverter 低功输入或非逆变
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 4CX25-000C |
Cathode driven RF amplifier
|
http://
Communications & Power Industries, Inc.
|
| 3CX3000F7 |
Cathode driven RF amplifier
|
Communications & Power Industries, Inc.
|
| 3CW5000A7 |
Cathode Driven RF Linear Amplifier
|
Communications & Power Industries, Inc.
|
| STV9303 STV9303W |
PULSE DRIVEN VERTICAL BOOSTER
PULSE DRIVEN VERTICAL BOOSTER
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
